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August 2007
FDB8453LZ
N-Channel PowerTrench ? MOSFET
40V, 50A, 7.0m ?
Features
Max r DS(on) = 7.0m ? at V GS = 10V, I D = 17.6A
Max r DS(on) = 9.0m ? at V GS = 4.5V, I D = 14.9A
HBM ESD protection level of 7.6kV typical (note 4)
Fast Switching
RoHS Compliant
tm
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench ? process that has
been especially tailored to minimize the on-state resistance and
switching loss. G-S zener has been added to enhance ESD
voltage level.
Applications
Inverter
Power Supplies
D
D
G
S
TO-263AB
G
FDB Series
MOSFET Maximum Ratings T C = 25°C unless otherwise noted
S
Symbol
V DS
V GS
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
T C = 25°C
Ratings
40
±20
50
Units
V
V
I D
-Continuous (Silicon limited)
-Continuous
T C = 25°C
T A = 25°C
(Note 1a)
74
16.1
A
-Pulsed
100
E AS
Single Pulse Avalanche Energy
(Note 3)
253
mJ
P D
Power Dissipation
Power Dissipation
T C = 25°C
T A = 25°C
(Note 1a)
66
3.1
W
T J , T STG
Operating and Storage Junction Temperature Range
-55 to +150
°C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
1.88
40
°C/W
Package Marking and Ordering Information
Device Marking
FDB8453LZ
Device
FDB8453LZ
Package
TO-263AB
Reel Size
330mm
Tape Width
24mm
Quantity
800 units
?2007 Fairchild Semiconductor Corporation
FDB8453LZ Rev.C1
1
www.fairchildsemi.com
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